Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

We discuss the effect of dielectric environment (substrate/bottom oxide, gate insulator, and metal gates) on electronic transport in two-dimensional (2D) transition dichalcogenides (TMD) monolayers. employ well-known ab initio methods to calculate low-field carrier mobility free-standing layers use continuum approximation extend our study double-gate structures, including effects screening electron-phonon interaction caused by bottom oxide scattering with hybrid interface optical-phonon/plasmon excitations (``remote phonon scattering''). find that presence insulators a high constant may improve significantly mobility. However, negates this gain degrades below its value. process is dominated long-wavelength interactions that, for sheet density interest, are strongly affected coupling 2D plasmons. Considering geometry ${\mathrm{Si}\mathrm{O}}_{2}$ as various top-gate insulators, we decreases top-insulator increases (from hBN ${\mathrm{Zr}\mathrm{O}}_{2}$), expected. observe two main deviations from trend: predicted case weakly polar hBN, much lower than expected calculated gate-insulator/TMD/bottom-oxide stacks which or more materials have optical phonons similar resonating frequencies. also gates noticeable but not particularly strong. Finally, TMD constant, free-carrier density, temperature properties